国家/地区 美国（8） 韩国（7） 日本（6） 中国（5） 世界知识产权组织（4） 欧洲专利局（EPO）（3）
IPC部 B（10） C（9） D（2）
H（2）
IPC大类 B01（10） C01（9） B82（8）
B32（5） B05（4） C08（2）
D01（2） H01（2）
IPC小类 B01J（10）
IPC C01B031/02（6） C01B031/04（6） B01J021/18（4）
B82B003/00（4） B32B009/00（3） B82Y040/00（3）
B01J019/12（2） B01J023/755（2） B05D003/02（2）
B82B001/00（2） B82Y030/00（2） C01B031/00（2）
D01F009/12（2）
发明人 CHOI J（5） CHOI J Y（5） SHIN H（5）
SHIN H J（5） YOON S（5） YOON S M（5）
IN Z（2）
公开年 2009（10）
申请年 2008（6）  2009（3） 
专利权人 SAMSUNG ELEC.（5）

Stacked graphene-diamond hybrid material for semiconductor device comprises diamond matrix, and stacked graphene configured to be converted in certain thickness from a lattice plane cut by surface of matrix due to alternative loss of plane.

AHN J, LEE J, LEE S, LEE W, AHN J P, LEE J K, LEE S C, LEE S H, LEE W S, LEE U

Method for processing graphene sheet type-material used for semiconductor integrated circuit device, involves irradiating vacuum UV rays to surface of graphene sheet-type material to remove or modify outermost surface layer of material.

ASANO T

Manufacture of graphene for electrode, involves applying alternating current to electrodes arranged in and exterior of liquid containing organic compound, generating plasma in gas-liquid interface and decomposing organic compound.

HORI M, KANO H

Cutting graphene for developing flexible electronic surfaces involves constructing raised titanium dioxide nanometer structural layer on quartz substrate to obtain titanium dioxide mask, contacting with graphene sheet, and irradiating.

LIU Z, ZHANG L

Preparing graphene shell comprises performing first heat treatment on a mixture of organic solvent and graphitization catalyst to carburize the catalyst, and forming the shells on surfaces of carburized catalyst by second heat treatment.

CHOI J, SHIN H, YOON S, IN Z, CHOI J Y, SHIN H J, YOON S M

Preparing graphene sheet, useful in e.g. electrical device, comprises forming film comprising graphitizing catalyst, heat-treating gaseous carbon source in presence of the catalyst to form graphene, and cooling graphene to form sheet.

CHOI J, SHIN H, YOON S, CHOI J Y, SHIN H J, YOON S M, IN Z

Formation of nano dots for forming charge trap layer used in fabrication method of memory device, involves forming cores, coating surfaces of cores with polymer, and thermally treating coated surfaces of cores to form graphene layer.

CHOI J, SHIN H, YOON S, CHOI J Y, SHIN H J, YOON S M

Carbon nanotube powder, useful e.g. as additives for rubber and ceramics and as conductive additives in electrodes and solar cells, comprises carbon nanotubes, which consist of graphite layers that are made of graphene layers.

BRAMERWEGER E, BUCHHOLZ S, HOCKE H, MEYER H, MLECZKO L, RUDOLF R, SCHMID M, VOETZ M, WEBER R, WOLF A, BEURAMEOBEGEO E, BUHIHOLCHEU J, HOKE H, MEULREKCHEUKO R, POECHEU M, RUDOLPH R, SCHMIDT M, MAYER H, WERTS M, MERWEGER E, SHMID M, HOKKE H, BRAMER V E, FYOTC M, BUHHOLC Z, BRAMER W E, SCHMITT M

Graphene sheet preparation e.g. for hydrogen storage medium, comprises disposing polymer on sheet form graphitizing catalyst, and heat-treating polymer on graphitizing catalyst in inert or reductive atmosphere.

CHOI J, SHIN H, YOON S, CHOI J Y, SHIN H J, YOON S M, YEONG C J, JIN S H, MI Y S

Preparing a graphene shell, useful e.g. in hydrogen storage medium, comprises forming a graphitizing catalyst in a three-dimensional form, coating a polymer on graphitizing catalyst and heat-treating polymer coated on graphitizing catalyst.

CHOI J, SHIN H J, YOON S, CHOI J Y, YOON S M, SHIN H